Stoichiometry dependence of the optical properties of amorphous-like Inx-wGawZn1-xO1+0.5x-δ thin films
Identifieur interne : 000495 ( Main/Repository ); précédent : 000494; suivant : 000496Stoichiometry dependence of the optical properties of amorphous-like Inx-wGawZn1-xO1+0.5x-δ thin films
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Abstract
The paper investigates the dependence of the optical properties on cation concentration of amorphous-like indium gallium zinc oxide thin films (Inx-wGawZn1-xO1+0.5x-δ) with various (In+Ga)/(In+Ga+Zn) and Ga/(In+Ga) ratios obtained by pulsed laser deposition. X-ray reflectivity and spectroscopic ellipsometry thickness results were in good agreement. The proportionality between density and the refractive index in the transparency range is evidenced. The extracted physical parameters are clearly influenced by the variation of cation concentration.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Stoichiometry dependence of the optical properties of amorphous-like In<sub>x-w</sub>Ga<sub>w</sub>Zn<sub>1-x</sub>O<sub>1+0.5x-δ</sub> thin films</title><author><name sortKey="Galca, A C" uniqKey="Galca A">A. C. Galca</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Laboratory of Multifunctional Materials and Structures, National Institute of Materials Physics</s1><s2>077125, Măgurele-Bucharest</s2><s3>ROU</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>Roumanie</country><wicri:noRegion>077125, Măgurele-Bucharest</wicri:noRegion></affiliation></author><author><name sortKey="Socol, G" uniqKey="Socol G">G. Socol</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Laser-Surface-Plasma Interactions Laboratory, Lasers Department, National Institute for Lasers, Plasma and Radiation Physics</s1><s2>077125, Măgurele-Bucharest</s2><s3>ROU</s3><sZ>2 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Roumanie</country><wicri:noRegion>077125, Măgurele-Bucharest</wicri:noRegion></affiliation></author><author><name sortKey="Trinca, L M" uniqKey="Trinca L">L. M. Trinca</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Laboratory of Multifunctional Materials and Structures, National Institute of Materials Physics</s1><s2>077125, Măgurele-Bucharest</s2><s3>ROU</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>Roumanie</country><wicri:noRegion>077125, Măgurele-Bucharest</wicri:noRegion></affiliation></author><author><name sortKey="Craciun, V" uniqKey="Craciun V">V. Craciun</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Laser-Surface-Plasma Interactions Laboratory, Lasers Department, National Institute for Lasers, Plasma and Radiation Physics</s1><s2>077125, Măgurele-Bucharest</s2><s3>ROU</s3><sZ>2 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Roumanie</country><wicri:noRegion>077125, Măgurele-Bucharest</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Department of Materials Science and Engineering, University of Florida, 320 MAE</s1><s2>Gainesville, FL 32611</s2><s3>USA</s3><sZ>4 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>Gainesville, FL 32611</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">13-0348924</idno><date when="2013">2013</date><idno type="stanalyst">PASCAL 13-0348924 INIST</idno><idno type="RBID">Pascal:13-0348924</idno><idno type="wicri:Area/Main/Corpus">000553</idno><idno type="wicri:Area/Main/Repository">000495</idno></publicationStmt><seriesStmt><idno type="ISSN">0169-4332</idno><title level="j" type="abbreviated">Appl. surf. sci.</title><title level="j" type="main">Applied surface science</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Amorphous state</term><term>Ellipsometry</term><term>Reflection spectrum</term><term>Semiconductor materials</term><term>Thin films</term><term>X-ray spectra</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Etat amorphe</term><term>Couche mince</term><term>Spectre réflexion</term><term>Spectre RX</term><term>Ellipsométrie</term><term>Semiconducteur</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">The paper investigates the dependence of the optical properties on cation concentration of amorphous-like indium gallium zinc oxide thin films (In<sub>x-w</sub>Ga<sub>w</sub>Zn<sub>1-x</sub>O<sub>1+0.5x-δ</sub>)<sub> </sub>with various (In+Ga)/(In+Ga+Zn) and Ga/(In+Ga) ratios obtained by pulsed laser deposition. X-ray reflectivity and spectroscopic ellipsometry thickness results were in good agreement. The proportionality between density and the refractive index in the transparency range is evidenced. The extracted physical parameters are clearly influenced by the variation of cation concentration.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0169-4332</s0></fA01><fA03 i2="1"><s0>Appl. surf. sci.</s0></fA03><fA05><s2>281</s2></fA05><fA08 i1="01" i2="1" l="ENG"><s1>Stoichiometry dependence of the optical properties of amorphous-like In<sub>x-w</sub>Ga<sub>w</sub>Zn<sub>1-x</sub>O<sub>1+0.5x-δ</sub> thin films</s1></fA08><fA09 i1="01" i2="1" l="ENG"><s1>EMRS 2012 Fall Meeting Symposium on highly precise characterization of materials for nano and bio technologies</s1></fA09><fA11 i1="01" i2="1"><s1>GALCA (A. C.)</s1></fA11><fA11 i1="02" i2="1"><s1>SOCOL (G.)</s1></fA11><fA11 i1="03" i2="1"><s1>TRINCA (L. M.)</s1></fA11><fA11 i1="04" i2="1"><s1>CRACIUN (V.)</s1></fA11><fA12 i1="01" i2="1"><s1>PETRIK (Peter)</s1><s9>ed.</s9></fA12><fA14 i1="01"><s1>Laboratory of Multifunctional Materials and Structures, National Institute of Materials Physics</s1><s2>077125, Măgurele-Bucharest</s2><s3>ROU</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ></fA14><fA14 i1="02"><s1>Laser-Surface-Plasma Interactions Laboratory, Lasers Department, National Institute for Lasers, Plasma and Radiation Physics</s1><s2>077125, Măgurele-Bucharest</s2><s3>ROU</s3><sZ>2 aut.</sZ><sZ>4 aut.</sZ></fA14><fA14 i1="03"><s1>Department of Materials Science and Engineering, University of Florida, 320 MAE</s1><s2>Gainesville, FL 32611</s2><s3>USA</s3><sZ>4 aut.</sZ></fA14><fA15 i1="01"><s1>Institute for Technical Physics and Materials Science</s1><s3>HUN</s3></fA15><fA15 i1="02"><s1>Fraunhofer Institute for Integrated Systems and Device Technology</s1><s3>DEU</s3></fA15><fA18 i1="01" i2="1"><s1>European Materials Research Society (E-MRS)</s1><s2>Strasbourg</s2><s3>FRA</s3><s9>org-cong.</s9></fA18><fA20><s1>96-99</s1></fA20><fA21><s1>2013</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>16002</s2><s5>354000506511820160</s5></fA43><fA44><s0>0000</s0><s1>© 2013 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>23 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>13-0348924</s0></fA47><fA60><s1>P</s1><s2>C</s2></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Applied surface science</s0></fA64><fA66 i1="01"><s0>NLD</s0></fA66><fC01 i1="01" l="ENG"><s0>The paper investigates the dependence of the optical properties on cation concentration of amorphous-like indium gallium zinc oxide thin films (In<sub>x-w</sub>Ga<sub>w</sub>Zn<sub>1-x</sub>O<sub>1+0.5x-δ</sub>)<sub> </sub>with various (In+Ga)/(In+Ga+Zn) and Ga/(In+Ga) ratios obtained by pulsed laser deposition. X-ray reflectivity and spectroscopic ellipsometry thickness results were in good agreement. The proportionality between density and the refractive index in the transparency range is evidenced. The extracted physical parameters are clearly influenced by the variation of cation concentration.</s0></fC01><fC02 i1="01" i2="3"><s0>001B60</s0></fC02><fC02 i1="02" i2="3"><s0>001B70</s0></fC02><fC02 i1="03" i2="3"><s0>001B80</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Etat amorphe</s0><s5>01</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>Amorphous state</s0><s5>01</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Couche mince</s0><s5>02</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>Thin films</s0><s5>02</s5></fC03><fC03 i1="03" i2="X" l="FRE"><s0>Spectre réflexion</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="ENG"><s0>Reflection spectrum</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="SPA"><s0>Espectro reflexión</s0><s5>03</s5></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Spectre RX</s0><s5>04</s5></fC03><fC03 i1="04" i2="3" l="ENG"><s0>X-ray spectra</s0><s5>04</s5></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Ellipsométrie</s0><s5>05</s5></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Ellipsometry</s0><s5>05</s5></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Semiconducteur</s0><s5>15</s5></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Semiconductor materials</s0><s5>15</s5></fC03><fN21><s1>329</s1></fN21><fN44 i1="01"><s1>OTO</s1></fN44><fN82><s1>OTO</s1></fN82></pA><pR><fA30 i1="01" i2="1" l="ENG"><s1>EMRS 2012 Fall Meeting. Symposium K on "Highly precise characterization of materials for nano and bio technologies"</s1><s3>Warsaw POL</s3><s4>2012-09-17</s4></fA30></pR></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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